Citation
P. De Padova et al., Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysis, APPL SURF S, 166(1-4), 2000, pp. 214-219
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332
→ ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
214 - 219
Database
ISI
SICI code
0169-4332(20001009)166:1-4<214:TEOTRO>2.0.ZU;2-F
Abstract
The adsorption of three monolayers (3 MLs) of Sb at - 120 degrees C on the
Si(001)c(4 x 2) surface and the subsequent annealing up to 650 degrees C we
re followed by high resolution core level spectroscopy and RHEED analysis.
By relating the electron diffraction patterns to the Si2p and Sb4d core lev
el spectra measured after each annealing cycle, it was possible to monitor
the evolution of the Sb/Si interface structure up to the achievement of a d
iffuse (2 x 1) reconstruction. Even after the annealing to 650 degrees C, t
he quality of the surface reconstruction remained poor, as attested by the
RHEED pattern, by the intensity of the Si2p surface component and by the br
oadening of the Sb4d lineshape. (C) 2000 Published by Elsevier Science B.V.