Misfit dislocations and radiative efficiency of InxGa1-xN/GaN quantum wells

Authors
Rebane, YT Shreter, YG Wang, WN
Citation
Yt. Rebane et al., Misfit dislocations and radiative efficiency of InxGa1-xN/GaN quantum wells, APPL SURF S, 166(1-4), 2000, pp. 300-303
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
300 - 303
Database
ISI
SICI code
0169-4332(20001009)166:1-4<300:MDAREO>2.0.ZU;2-R
Abstract
We report results of calculations of radiative efficiency of InxGa1-xN quan tum wells embedded in wurtzite GaN epilayer. It was found that misfit dislo cations with density up to similar to 10(5-6) cm(-1) could improve the quan tum efficiency of the InxGa1-xN wells by more than 10 times because they re duce the quantum well built-in electric field. At higher densities, the mis fit dislocations suppress the quantum efficiency of the wells since they pr oduce an additional channel of nonradiative recombination. (C) 2000 Elsevie r Science B.V. All rights reserved.