Raman and photoluminescence spectroscopy from as grown and 147 keV Ar+-ionimplanted AlxGa1-xAs/GaAs quantum wells

Authors
Kunert, HW
Citation
Hw. Kunert, Raman and photoluminescence spectroscopy from as grown and 147 keV Ar+-ionimplanted AlxGa1-xAs/GaAs quantum wells, APPL SURF S, 166(1-4), 2000, pp. 304-308
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
304 - 308
Database
ISI
SICI code
0169-4332(20001009)166:1-4<304:RAPSFA>2.0.ZU;2-D
Abstract
The AL(x)Ga(1-x)As/GaAs quantum wells (QWS) were subjected to 147 keV Ar+-i on bombardment. The response of the QWS was studied by means of the seconda ry ion mass spectroscopy (SIMS), low temperature photoluminescence (LTPL) a nd the inelastic light scattering spectroscopy. The damage accumulation in the QWS lends to a shift of quasiparticle energy levels towards lower energ ies in QWS and to a decrease of LO, and LO, frequency modes of the AL(x)Ga( 1-x)As slabs. No good recovery has been found after annealing. (C) 2000 Els evier Science B.V. All rights reserved.