Direct observation of interface effects of thin AlAs(100) layers buried inGaAs

Authors
Agui, A Sathe, C Guo, JH Nordgren, J Mankefors, S Nilsson, PO Kanski, J Andersson, TG Karlsson, K
Citation
A. Agui et al., Direct observation of interface effects of thin AlAs(100) layers buried inGaAs, APPL SURF S, 166(1-4), 2000, pp. 309-312
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
309 - 312
Database
ISI
SICI code
0169-4332(20001009)166:1-4<309:DOOIEO>2.0.ZU;2-7
Abstract
A study of the electronic structure of ultrathin AlAs layers buried in GaAs (100) and their interfaces is presented. Al L-2,L-3 soft-X-ray-emission (SX E) spectra from the AlAs layers were measured. The spectra show distinct th ickness-dependent features, which are reproduced using ab initio calculatio ns. (C) 2000 Elsevier Science B.V. All rights reserved.