Electronic structure of ultrathin AlAs(100) layers buried in GaAs

Authors
Mankefors, S
Citation
S. Mankefors, Electronic structure of ultrathin AlAs(100) layers buried in GaAs, APPL SURF S, 166(1-4), 2000, pp. 313-316
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
313 - 316
Database
ISI
SICI code
0169-4332(20001009)166:1-4<313:ESOUAL>2.0.ZU;2-B
Abstract
The electronic structure of 1, 2 and 5 monolayers (ML) of AlAs(100) buried in GaAs has been investigated by ab initio calculations. Distinct differenc es are observed in the density of states (DOS). In particular, interface st ates are found for the I-ML case and the outermost layer of the thicker sla bs. (C) 2000 Elsevier Science B.V. All rights reserved.