Smooth interface effects on the confinement properties of GaSb/AlxGa1-xSb quantum wells

Authors
Adib, AB de Sousa, JS Farias, GA Freire, VN
Citation
Ab. Adib et al., Smooth interface effects on the confinement properties of GaSb/AlxGa1-xSb quantum wells, APPL SURF S, 166(1-4), 2000, pp. 336-340
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
336 - 340
Database
ISI
SICI code
0169-4332(20001009)166:1-4<336:SIEOTC>2.0.ZU;2-H
Abstract
A theoretical investigation on the confinement properties of GaSb/AlxGa1-xS b single quantum wells (QWs) with smooth interfaces is performed. Error fun ction (erf)-like interfacial aluminum molar fraction variations in the QWs, from which it is possible to obtain the carriers effective masses and conf inement potential profiles, are assumed. It is shown that the existence of smooth interfaces blue shifts considerably the confined carriers and excito n energies, an effect which is stronger in thin QWs. (C) 2000 Elsevier Scie nce B.V. All rights reserved.