Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon

Authors
Korsunskaya, NE Kaganovich, EB Khomenkova, LY Bulakh, BM Dzhumaev, BR Beketov, GV Manoilov, EG
Citation
Ne. Korsunskaya et al., Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon, APPL SURF S, 166(1-4), 2000, pp. 349-353
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
349 - 353
Database
ISI
SICI code
0169-4332(20001009)166:1-4<349:EOAADP>2.0.ZU;2-U
Abstract
Plenty photoluminescence (PL) and plenty photoluminescence excitation (PLE) spectra, as well as layer structure and surface substances on Si crystalli tes of porous silicon prepared by different technique, have been investigat ed by photoluminescence, atomic force microscope (AFM) and infrared (IR) tr ansmission methods. It is shown that PLE spectra, consisted of several exci tation bands, do not depend on Si crystallites sizes. The nature of excitat ion bands is discussed. (C) 2000 Elsevier Science B.V. All rights reserved.