Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth

Authors
Pristovsek, M Menhal, H Zettler, JT Richter, W
Citation
M. Pristovsek et al., Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth, APPL SURF S, 166(1-4), 2000, pp. 433-436
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
433 - 436
Database
ISI
SICI code
0169-4332(20001009)166:1-4<433:DOGOTG>2.0.ZU;2-2
Abstract
We have measured the valley spacing on the GaAs (113) surface using ex-situ atomic force microscopy (AFM). From samples grown at different temperature s and partial pressures, the diffusion length, activation energies for diff usion and diffusion constants were derived. The results were correlated to in-situ reflectance anisotropy spectroscopy (RAS) spectra. On GaAs (113), m ainly, an (8 x 1) reconstruction is found with an EDiff = (0.38 +/- 0.06) e V. (C) 2000 Elsevier Science B.V. All rights reserved.