Van der Waals-xenotaxy: growth of GaSe(0001) on low index silicon surfaces

Authors
Rudolph, R Pettenkofer, C Klein, A Jaegermann, W
Citation
R. Rudolph et al., Van der Waals-xenotaxy: growth of GaSe(0001) on low index silicon surfaces, APPL SURF S, 166(1-4), 2000, pp. 437-441
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
437 - 441
Database
ISI
SICI code
0169-4332(20001009)166:1-4<437:VDWGOG>2.0.ZU;2-Q
Abstract
Thin films of the layered chalcogenide GaSe were deposited on Si(111), Si(1 10), and Si(100) surfaces by molecular beam epitaxy. The interface formatio n was investigated with photoemission and LEED. In all cases GaSe grows wit h its hexagonal (0001) axis normal to the substrate surfaces. (C) 2000 Else vier Science B.V. All rights reserved.