Formation energy of threefold coordinated oxygen in SiO2 systems

Authors
Citation
A. Pasquarello, Formation energy of threefold coordinated oxygen in SiO2 systems, APPL SURF S, 166(1-4), 2000, pp. 451-454
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
451 - 454
Database
ISI
SICI code
0169-4332(20001009)166:1-4<451:FEOTCO>2.0.ZU;2-X
Abstract
Using density functional calculations in the generalized gradient approxima tion, the excitation energy for the formation of a threefold coordinated ox ygen atom is evaluated. The bistable E-1' defect of alpha-quartz in the neu tral charge state is used as a model system. The puckered configuration whi ch shows a threefold coordinated oxygen center together with a doubly occup ied silicon dangling bond is found to be at 2.7 eV higher energy than the S i-Si dimer configuration. (C) 2000 Elsevier Science B.V. All rights reserve d.