The growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon

We summarize some recent work on the formation mechanisms, structure and co mposition of oxynitride and high-g films, as investigated by high-resolutio n medium-energy ion scattering (MEIS). We show that nitridation of a silico n oxide thin film takes place through transport of NO molecules to the oxid e/silicon interface. Ta2O5 films on Si have a compositionally graded oxide, breaking up at high annealing temperatures. A thin buffer layer of Si3N4 c an prevent this. (C) 2000 Elsevier Science B.V. All rights reserved.