The Auger transistor based on the Al-SiO2-n-Si heterostructure

We succeeded for the first time in creating the Auger transistor, in which in particular, we used a metal-insulator heterojunction instead of a widega p semiconductor. The Anger transistor base is created by holes, which are i nduced on silicon surface by electric field that exists in the thin oxide l ayer. The base is formed as a self-consistent quantum well near the n-silic on surface. The base width is about 10 Angstrom and the well depth is equal up to 0.7 eV, The regions of drift and impact ionization are practically s eparated in the Auger transistor. The S- and N-type instabilities of the co llector current in the Auger transistor in the case of circuit with a commo n emitter are investigated. (C) 2000 Elsevier Science B.V. All rights reser ved.