Fermi level-dependent defect formation at Cu(In,Ga) Se-2 interfaces

Authors
Klein, A Fritsche, J Jaegermann, W Schon, JH Kloc, C Bucher, E
Citation
A. Klein et al., Fermi level-dependent defect formation at Cu(In,Ga) Se-2 interfaces, APPL SURF S, 166(1-4), 2000, pp. 508-512
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
508 - 512
Database
ISI
SICI code
0169-4332(20001009)166:1-4<508:FLDFAC>2.0.ZU;2-#
Abstract
A removal of Cu from the surface is observed when the Fermi level moves upw ards in the bandgap of Cu(In,Ga)Se, semiconductors during contact formation . A model based on a comparison of band edge energies and electrochemical r edox energies is proposed, which qualitatively explains the observations an d might be used as a simple rule for predicting similar defect formation pr ocesses. (C) 2000 Elsevier Science B.V. All rights reserved.