On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts

Authors
Dmitruk, NL Ermolovich, IB Konakova, RV Lytvyn, OS Lytvyn, PM Milenin, VV Prokopenko, IV Venger, EF Voitsikhovskyi, DI Boltovets, NS Ivanov, VN
Citation
Nl. Dmitruk et al., On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts, APPL SURF S, 166(1-4), 2000, pp. 520-525
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
520 - 525
Database
ISI
SICI code
0169-4332(20001009)166:1-4<520:OTNOTL>2.0.ZU;2-X
Abstract
We present the results of structural, analytical, optical and electrophysic al investigations of TiBx-GaAs contacts. They were obtained by magnetron sp uttering from pressed powder targets and were studied before and after rapi d (60 s) thermal annealing (RTA) in a hydrogen atmosphere at T = 400 degree s C, 600 degrees C and 800 degrees C. It was shown that a transition layer is formed by GaxB1-xAs phase during contact formation. The decay of this ph ase during thermal annealing causes a parameter degradation in the surface- barrier diodes. (C) 2000 Elsevier Science B.V. All rights reserved.