Boron doped glasses, obtained from organic solution under low temperature a
nd deposited by spin-on technique, were used to form a highly doped p(+)-n
junction into structures with macro-porous silicon (PS) layer of 0.4-6 mu m
thickness. The junction was found to lie about 2.5 mu m deeper than the bo
ttom of the pores, and almost independent on their thickness. Enhanced boro
n diffusion was explained by a presence of local electric fields, caused by
tensions present at the border between PS layer and crystalline substrate.
Reflectivity values of less than 10% were obtained over 450-1050 nm wavele
ngth range for samples with PS layer, confirming the light-trapping effect
in electrochemically etched structures. (C) 2000 Elsevier Science B.V. All
rights reserved.