Mask-under-etch characterization of Si{110} in TMAH

Authors
Pandy, A Landsberger, LM Kahrizi, M
Citation
A. Pandy et al., Mask-under-etch characterization of Si{110} in TMAH, CAN J EL C, 25(1), 2000, pp. 19-24
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
CANADIAN JOURNAL OF ELECTRICAL AND COMPUTER ENGINEERING-REVUE CANADIENNE DE GENIE ELECTRIQUE ET INFORMATIQUE
ISSN journal
08408688 → ACNP
Volume
25
Issue
1
Year of publication
2000
Pages
19 - 24
Database
ISI
SICI code
0840-8688(200001)25:1<19:MCOSIT>2.0.ZU;2-8
Abstract
This work investigates the etching of (110) silicon at 80 degrees C in tetr a-methyl ammonium hydroxide at 25 wt% and 12 wt%. A wagon-wheel pattern hav ing spokes spaced 1 degrees apart is used, and the under-etched surfaces an d inclination angles are observed in detail. Under-etched surfaces are ofte n complex and composed of two or three facets, some smooth and some rough. While under-etch rate curves am similar, the inclination angles and crystal features of the exposed facets vary dramatically between the two concentra tions.