Influences of H+ implantation on the boron-doped synthesized by chemical vapor deposition diamond films

Diamond films (DF) were preliminarily B doped in situ during chemical vapor deposition. Subsequently, the films were implanted with 120 keV H+ to dose of 5 x 10(14) similar to 5 x 10(16) cm(-2). After the implantation, the B doped DF become insulating and Raman measurements indicate that the implant ation has amorphous carbon and graphite etched. It is known that the format ion of H-B pairs plays an important pole in property changes. However, for larger dose cases, the electrical resistance of DF is influenced by radiati on damage and/or non-diamond phases. In addition to them, annealing makes t he specimens conducting again. This phenomenon maybe has potential far appl ication in designing DF device.