New seed geometry for growth of low dislocation synthetic quartz

A method to grow low dislocation density synthetic quartz by using a specia l cutting seed geometry is reported. With this method, a relatively high di slocation density seed material is allowable. For such a purpose, a seed of new geometry was prepared and grown in a standard hydrothermal growth cond ition, long in Y-direction with multiple V-shaped notches made on Z-face. T he characterization study was conducted by X-ray topography. The results showed new growth regions, equal to the numbers of V-shaped not ches made in the seed and usually not found in the conventional Y- and Z-ba r synthetic quartz crystals. Each new growth region is composed of two sect ors of distinct textures. Soon they disappear due to their high growth velo city, and they are replaced by the so-called Z-region. However, the growth process of these new sectors grown perpendicular to the internal faces of t he V-shaped notches played an important role in inhibiting the propagation of the dislocation originally present in the seed into the grown Z-region.