ELECTRONIC-STRUCTURE OF GASB UNDER TEMPERATURE AND PRESSURE EFFECTS

Authors
BOUARISSA N ZAOUI A DUFOUR JP CERTIER M AOURAG H
Citation
N. Bouarissa et al., ELECTRONIC-STRUCTURE OF GASB UNDER TEMPERATURE AND PRESSURE EFFECTS, Materials science & engineering. B, Solid-state materials for advanced technology, 47(1), 1997, pp. 1-12
Citations number
30
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
47
Issue
1
Year of publication
1997
Pages
1 - 12
Database
ISI
SICI code
0921-5107(1997)47:1<1:EOGUTA>2.0.ZU;2-D
Abstract
The variation of the direct and indirect band gaps of GaSb with pressu re and temperature has been calculated using the adjacent empirical ps eudopotential method. Our results for most of the gaps agree well with those of the experimental one. The contribution of the thermal expans ion term to the temperature dependence of the gaps has been estimated and the results show that this effect is more important for the direct gap than the indirect one. (C) 1997 Published by Elsevier Science S.A .