SHORT-WAVELENGTH PHASE-CHANGE OPTICAL-DATA STORAGE IN IN-SB-TE ALLOY-FILMS

Physical properties of In-Sb-Te thin films prepared by D.C. magnetron sputtering method are studied, X-ray diffraction and differential scan ning calorimetry (DSC) results indicate that the crystallization tempe rature and the activation energy of In47Sb14Te39 thin films are about 300 degrees C and 2.9 eV, respectively. The crystallization compounds of In47Sb14Te39 thin films mainly consist of In3SbTe2 with small amoun ts of InTe and In2Te3. Optical recording test of the films clearly sho ws that larger reflectivity contrast can be obtained by lower power ar gon laser (514.5 nm) irradiation. These results demonstrate that the t ernary composition film is a promising candidate for short-wavelength direct overwritable phase-change optical data storage. (C) 1997 Elsevi er Science S.A.