Mechanisms of transition-metal gettering in silicon

Authors
Myers, SM Seibt, M Schroter, W
Citation
Sm. Myers et al., Mechanisms of transition-metal gettering in silicon, J APPL PHYS, 88(7), 2000, pp. 3795-3819
Citations number
150
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
7
Year of publication
2000
Pages
3795 - 3819
Database
ISI
SICI code
0021-8979(20001001)88:7<3795:MOTGIS>2.0.ZU;2-A
Abstract
The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed. Methods for m athematical modeling of gettering are discussed and illustrated. Needs for further research are considered. (C) 2000 American Institute of Physics. [S 0021-8979(00)04719-8].