Crystallization behavior of as-deposited, melt quenched, and primed amorphous states of Ge2Sb2.3Te5 films

We compare the crystallization behavior of thin films of Ge2Sb2.3Te5 in var ious amorphous states, namely, as-deposited, melt-quenched, and primed. The se films are embedded in a quadrilayer stack similar in structure to the co mmercially available phase-change optical disks. This study shows that the melt-quenched amorphous film has a shorter crystallization onset time and a higher crystallization rate in comparison to the as-deposited amorphous fi lm. We also observed that variable priming leads to crystallization behavio r falling between that of the as-deposited and melt-quenched states. A qual itative model of the modification in crystallization behavior due to primin g is given based on the notion that priming produces crystalline embryos wh ich hastens crystallization process. (C) 2000 American Institute of Physics . [S0021-8979(00)09219-7].