Influence of microwave energy on semiconductors during ion implantation process

Microwave energy is used during the implantation-annealing process of semic onductors where it is shown that the implant ion damage anneal takes place at the same time as the implantation step. The microwave energy is observed to be focused within the plasma volume created by the electron-hole pairs, where the conductivity is increased considerably. It is shown that the imp lantation takes place perpendicularly with respect to the wafer surface and that there is very little lateral redistribution of ions. The transmission electron microscopy and measurements of the implanted zone confirm the pre dicted good results of this process. (C) 2000 American Institute of Physics . [S0021-8979(00)02719-5].