Jm. Goh et al., Optical properties of undoped and Ho3+, Er3+, and Tm3+-doped BaAl2S4 and BaAl2Se4 single crystals, J APPL PHYS, 88(7), 2000, pp. 4117-4121
The optical energy band gaps of BaAl2S4 and BaAl2Se4 single crystals at 300
K were found to be 3.98 and 3.35 eV, respectively, and the optical energy
band gaps of Ho3+, Er3+, and Tm3+-doped BaAl2S4 and BaAl2Se4 single crystal
s were smaller than those of the undoped single crystals. Photoluminescence
spectra peaked at 459 and 601 nm in the BaAl2S4 and at 486 and 652 nm in t
he BaAl2Se4. The photoluminescence emission peaks were attributed to donor-
acceptor pair recombinations. Photoluminescence spectra of the Ho3+, Er3+,
and Tm3+-doped BaAl2S4 and BaAl2Se4 at 5 K were measured in the wavelength
range of 400-900 nm. Sharp emission peaks due to Ho3+, Er3+, and Tm3+ ions
were observed and their transition mechanisms were proposed. (C) 2000 Ameri
can Institute of Physics. [S0021-8979(00)06619-6].