Optical properties of undoped and Ho3+, Er3+, and Tm3+-doped BaAl2S4 and BaAl2Se4 single crystals

Citation
Jm. Goh et al., Optical properties of undoped and Ho3+, Er3+, and Tm3+-doped BaAl2S4 and BaAl2Se4 single crystals, J APPL PHYS, 88(7), 2000, pp. 4117-4121
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
7
Year of publication
2000
Pages
4117 - 4121
Database
ISI
SICI code
0021-8979(20001001)88:7<4117:OPOUAH>2.0.ZU;2-Y
Abstract
The optical energy band gaps of BaAl2S4 and BaAl2Se4 single crystals at 300 K were found to be 3.98 and 3.35 eV, respectively, and the optical energy band gaps of Ho3+, Er3+, and Tm3+-doped BaAl2S4 and BaAl2Se4 single crystal s were smaller than those of the undoped single crystals. Photoluminescence spectra peaked at 459 and 601 nm in the BaAl2S4 and at 486 and 652 nm in t he BaAl2Se4. The photoluminescence emission peaks were attributed to donor- acceptor pair recombinations. Photoluminescence spectra of the Ho3+, Er3+, and Tm3+-doped BaAl2S4 and BaAl2Se4 at 5 K were measured in the wavelength range of 400-900 nm. Sharp emission peaks due to Ho3+, Er3+, and Tm3+ ions were observed and their transition mechanisms were proposed. (C) 2000 Ameri can Institute of Physics. [S0021-8979(00)06619-6].