Effect of signal modulated optical illumination on the Schrodinger wave function in a quantum well in a modulation doped field effect transistor and related device characteristics

The effect of signal modulated optical radiation on the Schrodinger wave fu nction has been studied in a quantum well in a n-AlGaAs/GaAs modulation dop ed field effect transistor (MODFET) and related device characteristics. Par tial depletion of the active region of the modulation doped field effect tr ansistor has been considered. At the heterojunction interface two different models for the quantum well has been assumed: (1) a triangular potential w ell and (2) a modified triangular potential well of finite depth. From the knowledge of frequency dependent Schrodinger wave function sheet concentrat ion of the two-dimensional electron gas, the drain-source current of the MO DFET and the transfer characteristics as a function of signal frequency hav e been evaluated. The frequency dependent current-voltage characteristics a re compared with the published theoretical results since no experimental da ta are available on similar studies. (C) 2000 American Institute of Physics . [S0021-8979(00)02917-0].