Preparation of transparent Nb/two-dimensional electron gas contacts by using electron cyclotron resonance plasma cleaning

Authors
Schapers, T Muller, RP Crecelius, G Hardtdegen, H Luth, H
Citation
T. Schapers et al., Preparation of transparent Nb/two-dimensional electron gas contacts by using electron cyclotron resonance plasma cleaning, J APPL PHYS, 88(7), 2000, pp. 4440-4442
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
7
Year of publication
2000
Pages
4440 - 4442
Database
ISI
SICI code
0021-8979(20001001)88:7<4440:POTNEG>2.0.ZU;2-9
Abstract
The effect of electron cyclotron resonance plasma cleaning on the contact r esistance between a superconducting Nb layer and a two-dimensional electron gas in a strained InxGa1-xAs/InP heterostructure is investigated. Cleaning by a He/H plasma results in a rough semiconductor surface and a high inter face resistance. In contrast, by using a pure He plasma a smooth semiconduc tor surface with a considerably lower interface resistance is obtained. (C) 2000 American Institute of Physics. [S0021-8979(00)10119-7].