A field effect transistor device (FET), consisting of a nonlinear Mott Insu
lator channel material, and a high dielectric-constant gate oxide, is explo
red as a nanoscale device. Experimental functionality of a large scale prot
otype (5 mu m channel length) has been demonstrated. The underlying physics
of the device is analyzed and modeled using a time-dependent Hartree appro
ach. Timing estimates suggest a relatively short switching time.