The Mott transition field effect transistor: A nanodevice?

Authors
Newns, DM Doderer, T Tsuei, CC Donath, WM Misewich, JA Gupta, A Grossman, BM Schrott, A Scott, BA Pattnaik, PC Von Gutfeld, RJ Sun, JZ
Citation
Dm. Newns et al., The Mott transition field effect transistor: A nanodevice?, J ELECTROCE, 4(2-3), 2000, pp. 339-344
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTROCERAMICS
ISSN journal
13853449 → ACNP
Volume
4
Issue
2-3
Year of publication
2000
Pages
339 - 344
Database
ISI
SICI code
1385-3449(200006)4:2-3<339:TMTFET>2.0.ZU;2-A
Abstract
A field effect transistor device (FET), consisting of a nonlinear Mott Insu lator channel material, and a high dielectric-constant gate oxide, is explo red as a nanoscale device. Experimental functionality of a large scale prot otype (5 mu m channel length) has been demonstrated. The underlying physics of the device is analyzed and modeled using a time-dependent Hartree appro ach. Timing estimates suggest a relatively short switching time.