Citation
Gj. Chen et al., The effect of microstructure and secondary phase on magnetic and electrical properties of La-deficient La1-xMnO3-delta (0 <= x <= 0.3) films, J MAGN MAGN, 219(3), 2000, pp. 317-324
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853
→ ACNP
Volume
219
Issue
3
Year of publication
2000
Pages
317 - 324
Database
ISI
SICI code
0304-8853(200009)219:3<317:TEOMAS>2.0.ZU;2-A
Abstract
The effects of La-deficiency on the microstructure, magnetic and electrical
properties of lanthanum manganite films are reported. By high-resolution t
ransmission electron microscopy observations, the irradiation damages were
found due to the introduction of vacancies. With proper control of La ions,
the magnetic transition temperature was elevated to higher than room tempe
rature. An insulator-metal transition (I-M transition) was observed for all
La1-xMnO3-delta films. The large negative magnetoresistance effect is demo
nstrated. In addition, the influence of the secondary-phase Mn3O4 on the pr
operties of the films is studied. (C) 2000 Elsevier Science B.V. All rights
reserved.