La. Miinea et Dm. Hoffman, Low pressure chemical vapor deposition of fluorine-doped indium oxide films from an indium alkoxide complex, J MAT CHEM, 10(10), 2000, pp. 2392-2395
Fluorine-doped indium oxide films are of interest as a transparent conducti
ng material. Polycrystalline indium oxide films were deposited at 400-550 d
egrees C in a low-pressure chemical vapor deposition process from In[OCMe(C
F3)(2)](3)(H2N-t-Bu) and O-2 precursors. The films deposited at less than o
r equal to 500 degrees C contained 2-3 atom% fluorine while the film deposi
ted at 550 degrees C had no detectable fluorine incorporation (by X-ray pho
toelectron spectroscopy with sputtering). Films deposited on quartz (approx
imate to 1800 Angstrom thickness) showed > 85% transmittance in the 400-800
nm region and had band gaps of 3.65-3.75 eV. Resistivities of 1.25 x 10(-2
)-9.96 x 10(-3) Ohm cm were measured for the as-deposited films. The resist
ivities of films grown on silicon decreased markedly after annealing to val
ues as low as 1.43 x 10(-3) Ohm cm.