Masked-maskless etching is a novel bulk micromachining technology for compl
ex silicon microstructures. Thr convex-corner undercutting of masked-maskle
ss etching is far different from that of normal masked etching. An experime
ntal investigation has been conducted to discover the configuration and top
ological evolution of the convex-corner undercutting under masked-maskless
etching. Based on the experimental results, the compensation criteria for t
he masked-maskless formed convex-corner undercutting are obtained and the c
orresponding compensation schemes are provided.