Prebreakdown current behaviour in the ionization cell with a semiconductorcathode

The prebreakdown spatial current stabilization df the Townsend discharge in an ionization cell with a high-resistivity semiconductor plate, a gap thic kness of 20 mu m and gas pressures of 200 and 10(-3) Ton is studied. It has been found, for the first time, that the substitution of one of the metall ic electrodes in an ionization cell by a semiconductor electrode leads to t he occurrence of a current of 10(-6)-10(-5) A, while in the case of two met allic electrodes a current above 10(-7) A is not observed. It is shown that the generation of carriers by a gas discharge establishes a positive feedb ack. A qualitative discussion of this effect is given, which includes avala nche formation in a system having a high-resistivity semiconductor for the Townsend discharge region. The recording of the current-voltage characteris tic between parallel-plane electrodes is realized.