Stoichiometric deviations and partial-pressure measurements in solid-vapour cadmium telluride system

Citation
A. Zappettini et al., Stoichiometric deviations and partial-pressure measurements in solid-vapour cadmium telluride system, MATER CH PH, 66(2-3), 2000, pp. 138-142
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584 → ACNP
Volume
66
Issue
2-3
Year of publication
2000
Pages
138 - 142
Database
ISI
SICI code
0254-0584(20001016)66:2-3<138:SDAPMI>2.0.ZU;2-B
Abstract
In the frame of a research project aimed at developing a single-crystal-gro wth technology of cadmium telluride (CdTe) for electrooptics and photorefra ctive applications, the authors have implemented a laser absorption techniq ue by which the partial pressure of the vapours (Te-2(g), Cd(g)) over solid CdTe can be monitored as a function of temperature in the temperature rang e 500-900 degrees C. By testing polycrystalline materials of different origins, this technique p roved to be a reliable tool for selecting the most suitable polycrystalline CdTe to be used as a source in the physical vapour transport (PVT) growth of CdTe single crystals. (C) 2000 Elsevier Science S.A. All rights reserved .