Monomethylurea single crystals grown by mechanical dimension limitation and
top seed solution growth methods have been characterized by X-ray topograp
hy and high resolution X-ray diffraction techniques. The samples showed a r
elatively low defect content with typical values of the full width at half
maximum of the X-ray diffraction peaks of 15 arcsec.
X-ray topographs using the Cu K alpha (0 2 2) transmission setting evidence
d that the seed-crystal interface is a very critical region giving rise to
the formation of inclusions and grown-in dislocations. The absence of dislo
cations revealed by X-ray topography in top seed grown crystals confirmed t
he possibility of obtaining large volumes of crystal nearly dislocation fre
e.
The preparation of organic crystals for X-ray topographic characterization
requires a careful preparation of surfaces. In monomethylurea single crysta
ls this process is very critical leading to the formation of surface defect
s which partly mask the topographic contrast from grown-in defects. (C) 200
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