Electrodeposition of stoichiometric polycrystalline ZnTe on n(+)-GaAs and Ni-P

An acid aqueous sulphate electrolyte is proposed for the low temperature di rect electrochemical growth of single-phase polycrystalline ZnTe. Single-cr ystal n(+)-GaAs and amorphous electroless Ni-P were used as substrates. The relationship between electrochemical growth conditions and the crystalline structure of as-deposited ZnTe were disclosed and correlated to the cathod e chemistry during the growth process. Under suitable plating conditions th e removal of tellurium (Te) excess from the deposit can be achieved, result ing in stoichiometric ZnTe. The nucleation of ZnTe was assessed through mor phology observations by scanning electron microscopy: an instantaneous type prevails on GaAs and a progressive one on amorphous Ni-P. Chemical depth p rofiles of Zn and Te were investigated by X-ray photoelectron spectrometry measurements. (C) 2000 Elsevier Science S.A. All rights reserved.