Citation
G. Attolini et al., Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE, MATER CH PH, 66(2-3), 2000, pp. 246-252
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584
→ ACNP
Volume
66
Issue
2-3
Year of publication
2000
Pages
246 - 252
Database
ISI
SICI code
0254-0584(20001016)66:2-3<246:EOIAOI>2.0.ZU;2-P
Abstract
Because of the growing interest toward the InGaP/GaAs heterostructure and i
ts related Al-free devices development, the difficulties in obtaining the b
est electronic properties have to be well known. Here, structural, optical
and electrical investigations of InxGa1-x layers grown with different MOVPE
machines have been employed to give evidence that uniformity of the crysta
lline quality, morphology, optical and transport properties are strongly af
fected by (i) lattice matching, (ii) gas phase fluid-dynamics, (iii) superl
attice ordering. (C) 2000 Elsevier Science S.A. All rights reserved.