Crystal growth and characterization of layered semimagnetic semiconductor compounds Cd1-yMnyIn2-2xGa2xS4

Citation
G. Attolini et V. Sagredo, Crystal growth and characterization of layered semimagnetic semiconductor compounds Cd1-yMnyIn2-2xGa2xS4, MATER CH PH, 66(2-3), 2000, pp. 274-277
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584 → ACNP
Volume
66
Issue
2-3
Year of publication
2000
Pages
274 - 277
Database
ISI
SICI code
0254-0584(20001016)66:2-3<274:CGACOL>2.0.ZU;2-0
Abstract
Single crystals of Cd1-xMnxInGaS4 and MnIn2-2xGa2xS4 were grown by a vapor phase technique, the resulting crystals appeared as yellow and yellow-brown plates. X-ray power diffraction data could be indexed following the struct ure of a polytype of ZnIn2S4 structure. The characterization of the crystal s was done by optical absorption and magnetic susceptibility measurements a s a function of temperature. The energy gap for the different compounds at room temperature is in the range: 2.1-2.4 eV. The magnetic susceptibility d ata show a predominant antiferromagnetic interaction between the manganese ions down to 2 K. (C) 2000 Elsevier Science S.A. All rights reserved.