Numerical solution for hydrodynamical models of semiconductors

Numerical solutions of recent hydrodynamical models of semiconductors are c omputed in one-space dimension. Such models describe charge transport in se miconductor devices. Two models are taken into consideration. The first one has been developed by Blotekjaer, Baccarani ct al., and the second one by Anile ct al. In both cases the system of equations can be written as a conv ection-diffusion type system, with a right-hand side describing relaxation effects and interaction with a self-consistent electric field. The numerica l scheme is a splitting scheme based on the Nessyahu-Tadmor scheme for the hyperbolic step, and a semi-implicit scheme for the relaxation step. The nu merical results are compared to detailed Monte-Carlo simulation.