C. Xu et al., The generation mechanism of silicon oxide-aluminum oxide compound clustersby laser ablation of siliceous materials, MICROP M M, 39(1-2), 2000, pp. 351-358
The generation of silicon dioxide-aluminum oxide compound clusters under 30
8 nm XeCl excimer laser ablation of ZSM-5 zeolites with different SiO2/Al2O
3 ratios was studied by time-of-flight mass spectrometry. Two Al-containing
cluster sequences [(SiO2)(n-1)(AlO2)] and [(SiO2)(n)OAl](-) are observed i
n the negative ion channel. Through the relationship between the abundance
distribution of cluster sequences and the silicon aluminum ratio, the growt
h mechanism of [(SiO2)(n-1)(AlO2)]. is discussed. Owing to the high electro
n affinity of AlO2 compared to small (SiO2)(n) clusters, AlO2 is considered
to be the core of growth of the compound cluster [(SiO2)(n-1)(AlO2)](-). (
C) 2000 Elsevier Science B.V. All rights reserved.