Monolithically integrated optoelectronic receivers by AlGaAs/InGaAs doped-channel heterostructures

A monolithic optoelectronic receiver, consisting of an MSM photodiode and a transimpedance (TZ) amplifier, based on the AlGaAs/InGaAs doped-channel he terostructure, has been fabricated and investigated. The TZ amplifier demon strated a transimpedance gain (Z(T)) of 2.1 k Omega and a 3 dB bandwidth of 7.6 GHz by a 1 mu m gate-length technology, resulting in a transimpedance- bandwidth product (Z(T) . BW) of 17 GHz . k Omega. A 100 x 100 mu m(2) MSM photodetector (MSM-PD) with a 2 mu m finger width and a 4 mu m finger spaci ng demonstrated a responsivity of 0.25 A/W with a dark current of 10 nA at 5 V. The 3 dB bandwidth of this integrated optical receiver is 2.3 GHz. (C) John Wiley & Sons, Inc.