In the DEPFET pixel concept the detected incident radiation is directly sen
sed and amplified by a JFET integrated in every pixel cell. While the DEPFE
T detector principle has already been demonstrated previously on single pix
el structures, we present here the first successful operation of a large 32
x 32 DEPFET pixel matrix as an imaging device. The matrix has been exposed
to 60 keV gamma rays of a (241) Am source and has been scanned using an IR
laser. The principle of operation as well as the charge collection in the
structure and possible improvements are discussed. (C) 2000 Elsevier Scienc
e B.V. All rights reserved.