X-ray irradiation of ion-implanted MOS capacitors

He+ ion-implanted metal-oxide-semiconductor (MOS) capacitors with two diffe rent oxide thickness have been irradiated by X-rays and the depth distribut ion of the implant damage in the Si-SiO2 structures have been examined. The efficiency of X-ray annealing of electronic traps caused by implantation a nd changes in charge populations are reported. The experiment shows that (i n the case when defects introduced by implantation are located at the Si-Si O2 interface) only defects corresponding to the deep levels in the Si can b e affected by X-ray irradiation. When defects introduced by ion implantatio n are located deeper within the Si substrate complete annealing of these de fects is observed. (C) 2000 Elsevier Science B.V. All rights reserved.