He+ ion-implanted metal-oxide-semiconductor (MOS) capacitors with two diffe
rent oxide thickness have been irradiated by X-rays and the depth distribut
ion of the implant damage in the Si-SiO2 structures have been examined. The
efficiency of X-ray annealing of electronic traps caused by implantation a
nd changes in charge populations are reported. The experiment shows that (i
n the case when defects introduced by implantation are located at the Si-Si
O2 interface) only defects corresponding to the deep levels in the Si can b
e affected by X-ray irradiation. When defects introduced by ion implantatio
n are located deeper within the Si substrate complete annealing of these de
fects is observed. (C) 2000 Elsevier Science B.V. All rights reserved.