Theory of the non-steady-state photoelectromotive force for a two-level model of a photoconductor

The excitation of the non-steady-state photoelectromotive force is consider ed for the model of semiconductor with two impurity levels from which photo carriers are generated. The general expressions for complex amplitudes of p hotocurrent and electric field are obtained. We analyze the dependencies of photoelectromotive Force signal amplitude on temporal and spatial frequenc ies for the sillenite-type crystals and present a possible way for determin ation of real photoelectric parameters (the Lifetime of carriers, their mob ility, and average diffusion length).