Structure of atomically perfect lines of bismuth in the Si(001) surface

Authors
Bowler, DR
Citation
Dr. Bowler, Structure of atomically perfect lines of bismuth in the Si(001) surface, PHYS REV B, 62(11), 2000, pp. 7237-7242
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
11
Year of publication
2000
Pages
7237 - 7242
Database
ISI
SICI code
0163-1829(20000915)62:11<7237:SOAPLO>2.0.ZU;2-3
Abstract
Atomically perfect lines of bismuth (200 nm long or more) form in the Si(00 1) surface when a bismuth covered surface is annealed around the bismuth de sorption temperature. We describe modeling results for the structure of the se lines based on tight binding calculations, examine evidence for their ex traordinary perfection, and describe the procedure used to fit the tight bi nding parametrization. The perfection of the lines is found to arise from a combination of thermodynamic and kinetic reasons.