Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots

Citation
Pp. Paskov et al., Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots, PHYS REV B, 62(11), 2000, pp. 7344-7349
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
11
Year of publication
2000
Pages
7344 - 7349
Database
ISI
SICI code
0163-1829(20000915)62:11<7344:MOHEIS>2.0.ZU;2-P
Abstract
Wr present magnetoluminescence measurements of InAs/GaAs self-assembled qua ntum dots (QD's) at different excitation intensities. By applying high exci tation intensities, the magnetic field evolution of the excited-state emiss ion of QD's is revealed. A splitting of the states with a nonzero magnetic momentum is observed and the in-plane reduced electron-hole mass is determi ned. The experimental value is found to be in a good agreement with the the oretical predictions based on the eight-band k.p model including both strai n effect and band nonparabolicity. The density dependence of the diamagneti c shift of the ground-state emission is also studied providing evidence for screening of the Coulomb interaction in QD's.