PECULIARITIES IN THE ELECTRON PROPERTIES OF DELTA(SB)-LAYERS IN EPITAXIAL SILICON .3. ELECTRON-PHONON RELAXATION

Complex studies of weak electron localization, electron-electron inter action, and electron overheating in Si crystals containing a delta(Sb) -layer with various concentrations of Sb atoms are carried out in orde r to obtain information on the characteristic times of inelastic elect ron relaxation. The temperature dependence of the electron-phonon rela xation time tau(ep) derived from the electron overheating effect can b e described by the dependence tau(ep) proportional to T-P, where p con gruent to 3.7 +/- 0.3, which corresponds to the case q(T)l < l (q(T) i s the wave vector of the thermal phonon and l the electron mean free p ath). (C) 1997 American Institute of Physics.