Planar Hall effect in the vertical Hall sensor

Citation
C. Schott et al., Planar Hall effect in the vertical Hall sensor, SENS ACTU-A, 85(1-3), 2000, pp. 111-115
Citations number
11
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
09244247 → ACNP
Volume
85
Issue
1-3
Year of publication
2000
Pages
111 - 115
Database
ISI
SICI code
0924-4247(20000825)85:1-3<111:PHEITV>2.0.ZU;2-H
Abstract
The planar Hall effect is theoretically and experimentally studied in the v ertical Hall sensor (VHS). Compared to silicon plate-shaped devices where e xperimental and theoretical value correspond well, the experimental value f or the vertical Hall device is about 10 times smaller than theory predicts. This fact is explained by anisotropy effects and by the unique self-compen sating structure of the device. Thus, magnetic field transducers built with devices of this structure are particularly adapted to the measurement of m agnetic fields with more than one component. (C) 2000 Elsevier Science S.A. All rights reserved.