A 3-phase model for VIS/NIR mu C-Si : H p-i-n detectors

The spectral response and the photocurrent delivered by entirely microcryst alline p-i-n-Si:H detectors an analysed under different applied bias and li ght illumination conditions. The spectral response and the internal collect ion depend not only on the energy range but also on the illumination side. Under [p]- and [n]-side irradiation, the internal collection characteristic s have an atypical shape. It is high for applied bias and lower than the op en circuit voltage, shows a steep decrease near the open circuit voltage (h igher under [n]-side illumination) and levels off for higher voltages. Addi tionally, the numerical modeling of the VIS/NIR detector, based on the band discontinuities near the grain boundaries and interfaces, complements the study and gives insight into the internal physical process. (C) 2000 Elsevi er Science S.A. All rights reserved.