Temperature cross-sensitivity of Hall plate in submicron CMOS technology

The temperature coefficient at the current-related sensitivity of a Hall pl ate in submicron CMOS technology was measured. A zero-temperature-coefficie nt region was observed. A model of the temperature coefficient based an the freeze-out effect and the temperature dependence of the Hall scattering fa ctor was developed. Using a Hall sensor in the observed zero-temperature-co efficient region may significantly improve its measurement accuracy. The ad ditional, very high influence of mechanical stress, due to the piezo-Hall e ffect, on the temperature coefficient has been analyzed for two packaging t echniques. (C) 2000 Elsevier Science S.A. All rights reserved.