Design and fabrication of on-chip integrated polySiGe and polySi Peltier devices

On-chip integration of Peltier devices introduces a number of new fabricati on considerations and yields a device with increasingly complex operating c haracteristics, when compared to the discrete device. Due to fabrication co mpatibility, polycrystalline SiGe (polySiGe) and polycrystalline Si (polySi ) are the thermoelectric materials of choice. Device performance is compare d for different thermoelectric materials, and the impact of the non-idealit ies on performance is analysed, interpreting the results in a graphical man ner. The primary conclusion from this study is that, although often ignored . the contact resistance of the device is the most prominent non-ideality. Using a fully compatible process, various Peltier devices have been fabrica ted. The initial values from the measurements performed on both polySi and polySiGe correspond well to those found in literature, validating the desig n concept, although further optimisation is required. (C) 2000 Elsevier Sci ence S.A. All rights reserved.