On-chip integration of Peltier devices introduces a number of new fabricati
on considerations and yields a device with increasingly complex operating c
haracteristics, when compared to the discrete device. Due to fabrication co
mpatibility, polycrystalline SiGe (polySiGe) and polycrystalline Si (polySi
) are the thermoelectric materials of choice. Device performance is compare
d for different thermoelectric materials, and the impact of the non-idealit
ies on performance is analysed, interpreting the results in a graphical man
ner. The primary conclusion from this study is that, although often ignored
. the contact resistance of the device is the most prominent non-ideality.
Using a fully compatible process, various Peltier devices have been fabrica
ted. The initial values from the measurements performed on both polySi and
polySiGe correspond well to those found in literature, validating the desig
n concept, although further optimisation is required. (C) 2000 Elsevier Sci
ence S.A. All rights reserved.