Wafer bonding by low-temperature soldering

Citation
C. Lee et al., Wafer bonding by low-temperature soldering, SENS ACTU-A, 85(1-3), 2000, pp. 330-334
Citations number
14
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
09244247 → ACNP
Volume
85
Issue
1-3
Year of publication
2000
Pages
330 - 334
Database
ISI
SICI code
0924-4247(20000825)85:1-3<330:WBBLS>2.0.ZU;2-O
Abstract
Recently. wafer level packaging received lots of attention in microsystems because it shows the potential to reduce the packaging cost, while the yiel d of devices after dicing and packaging can be increased. However, there is a limitation of commercialized wafer bonding technology. i.e., the high pr ocess temperature, such as 1000 degrees C of silicon fusion bonding, and 45 0 degrees C of anodic bonding. A novel tow-temperature wafer bonding with p rocess temperature lower than 160 degrees C is proposed, it applies the In- Sn alloy to form the interface of wafer bonding. The experiment results sho w helium leak test of 6 x 10(-9) Torr 1/s, and a tensile strength as high a s 200 kg/cm(2). Reliability test after 1500 temperature cycles between -10 degrees C and 80 degrees C also shows no trace of degradation compared to t he initial quality of the samples. This low-temperature soldering process d emonstrates its promising potential at the wafer level packaging in industr ial production. (C) 2000 Elsevier Science. S.A. All rights reserved.